Factory Lead Time  

12 Weeks

Mounting Type  

Through Hole

Mount  

Through Hole

Contact Plating  

Tin

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

85A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

39 ns

Power Dissipation (Max)  

180W Tc

Published  

2001

Series  

HEXFET®

Packaging  

Tube

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

11MOhm

Additional Feature  

AVALANCHE RATED, ULTRA LOW RESISTANCE

Voltage - Rated DC  

55V

Current Rating  

85A

Lead Pitch  

2.54mm

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

180W

Case Connection  

DRAIN

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

11m Ω @ 43A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3210pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

120nC @ 10V

Rise Time  

76ns

Vgs (Max)  

±20V

Fall Time (Typ)  

48 ns

Continuous Drain Current (ID)  

85A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

55V

Pulsed Drain Current-Max (IDM)  

290A

Dual Supply Voltage  

55V

Avalanche Energy Rating (Eas)  

250 mJ

Recovery Time  

100 ns

Max Junction Temperature (Tj)  

175°C

Nominal Vgs  

4 V

Length  

10.6426mm

Height  

19.8mm

Width  

4.82mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Contains Lead, Lead Free